Photodetectors

Photodetectors

Detectors & Sensors

High-performance photodiodes and phototransistors for precise light sensing and detection, tailored to specific wavelength ranges and sensitivities from UV to SWIR.

210-1750 nm

UV to SWIR detection range

10 fA

Ultra-low dark current for SiC UV detectors

EPIGAP OSA Photonics' photodetectors are essential components for precise light sensing and detection in applications like medical devices, industrial monitoring, and scientific instrumentation. The portfolio includes photodiodes and phototransistors in both SMD and THT form factors, tailored to specific wavelength ranges and sensitivities from roughly 210 nm to 1750 nm.

Detector materials include GaP, InP, SiC, Si, and InGaAs, chosen to match the target wavelength range - for example, SiC-based UV detectors such as the EOPD-280-0-0.3-1 achieve dark currents as low as 10 fA, while InGaAs detectors extend responsivity out to 1750 nm. Package options include TO-can (TO-46, TO-39, TO-52, TO-5) and SMD footprints with flat lens optics.

Leveraging its deep expertise, EPIGAP OSA optimizes and customizes detector designs to meet diverse and demanding application requirements, and can develop upcoming products or customized production on request.

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Green Architecture

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Precision Engineering

Every layout and component is tuned with variables and pixel-perfect details, so your brand stands on solid ground.

Dynamic Interactions

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Green Architecture

Evermind™ template is crafted like sustainable structures — clean, scalable, and built to last.

Precision Engineering

Every layout and component is tuned with variables and pixel-perfect details, so your brand stands on solid ground.

Dynamic Interactions

From nature-inspired transitions to fluid page structures, Evermind™ feels alive yet quietly sophisticated.

Technical Specifications

Material	Wavelength Range	Example Dark Current / Responsivity
SiC	210 - 355 nm	10 fA, 0.2 A/W (EOPD-280-0-0.3-1)
GaP	410 - 580 nm	5 pA, 0.3 A/W (EOPD-525-1-0.9)
Si	250 - 1100 nm	0.1-0.5 nA, up to 0.6 A/W (EOPD-940 series)
InGaAs	600 - 1750 nm	approx. 1-2 µA, 0.7 A/W (EOPD-1300-0 series)
InP	1300 - 1500 nm	0.3 nA, 1 A/W (EOPD-1300-1-0.3)

Package formats: SMD (e.g. 3216/1206) and THT TO-can (TO-46, TO-39, TO-52, TO-5). Source: epigap-osa.com/detectors/

Technical Specifications

Material	Wavelength Range	Example Dark Current / Responsivity
SiC	210 - 355 nm	10 fA, 0.2 A/W (EOPD-280-0-0.3-1)
GaP	410 - 580 nm	5 pA, 0.3 A/W (EOPD-525-1-0.9)
Si	250 - 1100 nm	0.1-0.5 nA, up to 0.6 A/W (EOPD-940 series)
InGaAs	600 - 1750 nm	approx. 1-2 µA, 0.7 A/W (EOPD-1300-0 series)
InP	1300 - 1500 nm	0.3 nA, 1 A/W (EOPD-1300-1-0.3)

Package formats: SMD (e.g. 3216/1206) and THT TO-can (TO-46, TO-39, TO-52, TO-5). Source: epigap-osa.com/detectors/

Technical Specifications

Material	Wavelength Range	Example Dark Current / Responsivity
SiC	210 - 355 nm	10 fA, 0.2 A/W (EOPD-280-0-0.3-1)
GaP	410 - 580 nm	5 pA, 0.3 A/W (EOPD-525-1-0.9)
Si	250 - 1100 nm	0.1-0.5 nA, up to 0.6 A/W (EOPD-940 series)
InGaAs	600 - 1750 nm	approx. 1-2 µA, 0.7 A/W (EOPD-1300-0 series)
InP	1300 - 1500 nm	0.3 nA, 1 A/W (EOPD-1300-1-0.3)

Package formats: SMD (e.g. 3216/1206) and THT TO-can (TO-46, TO-39, TO-52, TO-5). Source: epigap-osa.com/detectors/

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